Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology
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چکیده
منابع مشابه
Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology
We describe the evolution of microstructure during ultrahigh vacuum ion beam sputter deposition of Cu (00 1) at room temperature on hydrogen-terminated Si (00 1) . In situ reflection high energy electron diffraction indicates growth of an epitaxial Cu (001) film on Si (001) with the intensity of the Bragg rods sharpening during 5-20 nm of Cu film growth. Post-growth x-ray diffraction indicates ...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 1993
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.110302